Ultra-wideband Ge-rich silicon germanium integrated Mach-Zehnder interferometer for mid-infrared spectroscopy

Abstract : This Letter explores the use of Ge-rich Si 0.2 Ge 0.8 wave-guides on graded Si 1−x Ge x substrate for the demonstration of ultra-wideband photonic integrated circuits in the mid-infrared (mid-IR) wavelength range. We designed, fabricated , and characterized broadband Mach–Zehnder inter-ferometers fully covering a range of 3 μm in the mid-IR band. The fabricated devices operate indistinctly in quasi-TE and quasi-TM polarizations, and have an extinction ratio higher than 10 dB over the entire operating wavelength range. The obtained results are in good correlation with theoretical predictions, while numerical simulations indicate that the device bandwidth can reach one octave with low additional losses. This Letter paves the way for further realization of mid-IR integrated spectrometers using low-index-contrast Si 1−x Ge x waveguides with high germanium concentration.
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Optics Letters, Optical Society of America, 2017, 42 (17), pp.3482-3485. 〈10.1364/OL.42.003482〉
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Soumis le : vendredi 1 septembre 2017 - 15:08:01
Dernière modification le : jeudi 19 octobre 2017 - 01:11:22

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Vladyslav Vakarin, Joan Ramírez, Jacopo Frigerio, Andrea Ballabio, Xavier Le Roux, et al.. Ultra-wideband Ge-rich silicon germanium integrated Mach-Zehnder interferometer for mid-infrared spectroscopy. Optics Letters, Optical Society of America, 2017, 42 (17), pp.3482-3485. 〈10.1364/OL.42.003482〉. 〈hal-01579360〉

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