Effect of Interface Properties on the Electrical Characteristics of InGaN-based Multijunction Solar Cell

Abstract : The InGaN ternary alloy has the potentiality to achieve high efficiency solar cells: tunable bandgap in the whole solar spectrum, high absorption coefficient, high stability and radiation tolerance. These very promising characteristics make InGaN potentially ideal for designing and developing next-generation high-efficiency thin films solar cells. However, challenging issues remain to address: (i) the difficulty to elaborate sufficiently thick monocrystalline InGaN layers with a high Indium content; (a) the high defects density and the spontaneous and piezoelectric polarizations; (iii) the p-doping which remains difficult to master. In this report, we use rigorous optimization approach based on state-of-the-art optimization algorithms to investigate the effect of defects and polarization (spontaneous and piezoelectric) on a double junction InGaN solar cell. A better understanding of the mechanisms involved in the heterostructure has a crucial impact on the design and elaboration of high efficiency InGaN thin films solar cells which require, in particular, a precise control of the Tunnel Junction elaboration which is still very challenging.
Type de document :
Poster
ICNS 12 - 12th International Conference on Nitride Semiconductors, Jul 2017, Strasbourg, France
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https://hal.archives-ouvertes.fr/hal-01579140
Contributeur : Sidi Ould Saad Hamady <>
Soumis le : mercredi 30 août 2017 - 15:00:47
Dernière modification le : mercredi 10 octobre 2018 - 15:44:02

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ICNS12_201707_Poster.pdf
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  • HAL Id : hal-01579140, version 1

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Adaine Abdoulwahab, Sidi Ould Saad Hamady, Nicolas Fressengeas. Effect of Interface Properties on the Electrical Characteristics of InGaN-based Multijunction Solar Cell. ICNS 12 - 12th International Conference on Nitride Semiconductors, Jul 2017, Strasbourg, France. 〈hal-01579140〉

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