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Control of Sub-Nanosecond Precessional Magnetic Switching in STT-MRAM Cells for SRAM Applications

Abstract : STT-MRAM are foreseen as the best contender for DRAM replacement. STT-MRAM could also be used for SRAM applications if switching time below 1ns could be realized in a reliable way. In this study, we demonstrate that sub-ns switching with final state determined by the current polarity through the stack can be achieved in STT-MRAM cells comprising two spinpolarizing layers having orthogonal magnetic anisotropies [1],[2]. We carried out a thorough experimental and modeling study of these ultrafast STT-MRAM. We demonstrated that a quite reliable switching can be achieved by increasing the cell aspect ratio (AR) or advantageously by applying an in-plane static transverse field on the cell. Switching in 200ps could be demonstrated with write energy less than 100fJ.
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https://hal.archives-ouvertes.fr/hal-01579139
Contributor : Liliana D. Buda-Prejbeanu <>
Submitted on : Wednesday, August 30, 2017 - 3:00:29 PM
Last modification on : Thursday, April 8, 2021 - 12:42:02 PM

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B. Lacoste, M. Marins De Castro, R. C. Sousa, I. L. Prejbeanu, L. D. Buda-Prejbeanu, et al.. Control of Sub-Nanosecond Precessional Magnetic Switching in STT-MRAM Cells for SRAM Applications. IEEE 8th International Memory Workshop (IMW), May 2016, Paris, France. ⟨10.1109/IMW.2016.7495262⟩. ⟨hal-01579139⟩

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