Studies of structures elaborated by focused ion beam induced deposition

M. Prestigiacomo (1) , L. Roussel (2) , A. Houel (2) , P. Sudraud (2) , F. Bedu (3, 1) , D. Tonneau (3, 1) , V. Safarov (1) , H. Dallaporta (3, 1)

1 CRMCN - Centre de recherche de la matière condensée et des nanosciences
2 ZAC Saint Charles - Orsay Physics
3 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille

In this contribution, we present characterizations of tungsten wires and silicon oxide layers elaborated by focused ion beam induced deposition (FIBID). The deposits are performed in a cross-beam station equipped with a three channel gas injection system. Tungsten wires have been deposited from tungsten hexacarbonyl precursor. We have studied their electrical properties in situ by following the evolution of the wire resistance during the deposition process. These submicronic wires display an ohmic behaviour, a low resistivity (only 20 times higher than the bulk) and a good stability. As for insulator deposition, silicon oxide films from dissociation of penta methyl cyclo penta siloxane (PMCPS) precursor have been patterned. We present our results concerning electrical and chemical analyses carried out on test structure entirely elaborated by FIBID.

Mots clés: FIB induced deposition; Interconnections; Tungsten; PMCPS

Domaines: Science des matériaux [cond-mat.mtrl-sci]

M. Prestigiacomo, L. Roussel, A. Houel, P. Sudraud, F. Bedu, et al.. Studies of structures elaborated by focused ion beam induced deposition. Microelectronic Engineering, 2004, ⟨10.1016/j.mee.2004.07.047⟩. ⟨hal-01578374⟩