Numerical simulation of HTM-free and WOx based perovskite cells: Effects of interface conditions

Yong Huang (1) , S. Aharon (2) , Alexandre Gheno (3) , Sylvain Vedraine (3) , Laurent Pedesseau (1) , Jean-Philippe Burin (1) , Olivier Durand (1) , Johann Bouclé (3) , L. Etgar (2) , Jacky Even (1) , Alain Rolland (1)

1 FOTON - Institut des Fonctions Optiques pour les Technologies de l'informatiON
2 HUJ - The Hebrew University of Jerusalem
3 XLIM-RFEI - RF-ELITE : RF-Electronique Imprimée pour les Télécommunications et l'Energie

Hole transport material (HTM) free and WOx based perovskite solar cells are theoretically investigated by using drift diffusion and small signal models. The influence of interface states and leakage current is studied, and the current-voltage (JV) and capacitance-voltage (C-V) characteristics are reproduced in reasonable agreement with experimental data, including build in potential (Vbi) variation, open circuit voltage (VOC) loss and hysteresis effects.

Domaines: Physique [physics]; Sciences de l'ingénieur [physics]; Chimie

Yong Huang, S. Aharon, Alexandre Gheno, Sylvain Vedraine, Laurent Pedesseau, et al.. Numerical simulation of HTM-free and WOx based perovskite cells: Effects of interface conditions. 17th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD'17), Jul 2017, Copenhagen, Denmark. ⟨hal-01574953⟩