Low Noise Power Amplifier in 28-nm UTBB FDSOI Technology with Forward Body Bias

Mohsen Ali , Harb Adnan , Nathalie Deltimple (1) , Serhane Abraham

1 IMS - Laboratoire de l'intégration, du matériau au système

This paper presents a design of mm-wave LNPA which generates a large output power and low noise figure in one stage for a harmonic feedback oscillator block at the candidate of 5G; frequency 26 GHz. The LNPA is designed in the 28 nm UTBB FD-SOI. The benefits of this technology are stated with the effects of body biasing for the mm-wave LNPA. This amplifier is designed using a common source topology. It achieves 14 dBm Psat and 2.5 dB noise figure “NF”

Domaines: Electronique

Mohsen Ali, Harb Adnan, Nathalie Deltimple, Serhane Abraham. Low Noise Power Amplifier in 28-nm UTBB FDSOI Technology with Forward Body Bias. The Third International Conference on Electrical and Electronic Engineering, Telecommunication Engineering and Mechatronics (EEETEM2017), Apr 2017, Beirut, Lebanon. ⟨hal-01567853⟩