High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates

Abstract : Graphene and AlN are promising materials, interesting to combine together. In this study, we will present first results for direct growth of graphene on bulk AlN and on AlN templates using chemical vapor deposition, including the annealing of these substrates at high temperatures. Atomic force microscopy (AFM) enabled us to study the evolution of the AlN surface morphology after annealing and growth. Few-layer graphene deposition is demonstrated on the basis of X-ray photoemission and Raman spectroscopy
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Article dans une revue
Physica Status Solidi A-applications and Materials Science, 2017, 214 (4), pp.1600436. <10.1002/pssa.201600436>
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https://hal.archives-ouvertes.fr/hal-01563258
Contributeur : L2c Aigle <>
Soumis le : lundi 17 juillet 2017 - 14:39:15
Dernière modification le : mardi 18 juillet 2017 - 01:13:15

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R. Dagher, S. Matta, Romain Parret, Matthieu Paillet, Benoit Jouault, et al.. High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates. Physica Status Solidi A-applications and Materials Science, 2017, 214 (4), pp.1600436. <10.1002/pssa.201600436>. <hal-01563258>

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