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Article Dans Une Revue Journal of Optoelectronics and Advanced Materials Année : 2005

Photoinduced changes in the valence band states of GeXAs 40-XS60 thin films

Résumé

Valence band states of GeXAs40-XS60 glasses and amorphous films are obtained by means of X-ray photoelectron spectroscopy. Differences between the broad bands in the spectra, connected with differences in the composition as well as with structural changes initiated by illumination and/or annealing arc identified and discussed.

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Matériaux
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Dates et versions

hal-01560703 , version 1 (11-07-2017)

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  • HAL Id : hal-01560703 , version 1

Citer

Danielle Gonbeau, V. Pamukchieva, Rémi Dedryvère, E. Skordeva, D. Arsova. Photoinduced changes in the valence band states of GeXAs 40-XS60 thin films. Journal of Optoelectronics and Advanced Materials, 2005, 7 (1), pp.341-344. ⟨hal-01560703⟩
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