XPS study of photo- and thermally-induced changes in amorphous Ge xAs40-xS60

V. Pamukchieva , Danielle Gonbeau (1, 2) , Marie-Françoise Guimon , E. Skordeva , Rémi Dedryvère (2) , D. Arsova

1 LCTPCM - Laboratoire de Chimie théorique et Physico-chimie moléculaire
2 IPREM - Institut des sciences analytiques et de physico-chimie pour l'environnement et les materiaux

The electronic structure of GexAs40- xS60 glasses and amorphous films has been obtained by means of X-ray photoelectron spectroscopy. Core level peaks and valence band spectra in the dependence on the composition as well as on structural changes initiated by illumination and/or annealing have been investigated and discussed. © 2005 Elsevier B.V. All rights reserved.

Domaines: Matériaux

V. Pamukchieva, Danielle Gonbeau, Marie-Françoise Guimon, E. Skordeva, Rémi Dedryvère, et al.. XPS study of photo- and thermally-induced changes in amorphous Ge xAs40-xS60. Physica B: Condensed Matter, 2006, 371 (2), pp.302-308. ⟨10.1016/j.physb.2005.10.133⟩. ⟨hal-01560700⟩