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Introducing 7-nm FinFET technology in Microwind

Abstract : This paper describes the implementation of a high performance FinFET-based 7-nm CMOS Technology in Microwind. Basic concepts related to the design of FinFET and design for manufacturing are also described. The performances of basic cells, ring oscillators and a 6-transistor RAM memory are also analyzed.
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https://hal.archives-ouvertes.fr/hal-01558775
Contributor : Etienne Sicard Connect in order to contact the contributor
Submitted on : Monday, July 10, 2017 - 8:12:19 AM
Last modification on : Wednesday, November 3, 2021 - 4:32:49 AM
Long-term archiving on: : Wednesday, January 24, 2018 - 7:49:41 AM

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App Note 7nm -v7.pdf
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  • HAL Id : hal-01558775, version 1

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Etienne Sicard. Introducing 7-nm FinFET technology in Microwind. 2017. ⟨hal-01558775⟩

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