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Article Dans Une Revue IEEE Transactions on Nuclear Science Année : 2017

TCAD Simulation of the Single Event Effects in Normally-off GaN Transistors after Heavy Ion Radiation

Résumé

Electrical behavior of COTS normally-off GaN power transistors under heavy ion radiation is presented based on TCAD numerical simulation for the first time in order to better understand the mechanism of Single Event Effects (SEE) in these devices. Firstly, the worst case has been defined from the Single Event Transient mechanism. Then, the decrease in the electric field observed after radiation and the traps effect have been addressed. Finally, possible mechanisms of SEE in these devices under heavy ion are proposed.

Domaines

Electronique
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Dates et versions

hal-01556257 , version 1 (04-07-2017)

Identifiants

Citer

Moustafa Zerarka, Patrick Austin, Alain Bensoussan, Frédéric Morancho, André Durier. TCAD Simulation of the Single Event Effects in Normally-off GaN Transistors after Heavy Ion Radiation. IEEE Transactions on Nuclear Science, 2017, 64 (8), pp.2242-2249. ⟨10.1109/TNS.2017.2710629⟩. ⟨hal-01556257⟩
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