Energy Efficient Distributed-Oscillators at 134 and 202GHz with Phase-Noise Optimization through Body-Bias Control in 28nm CMOS FDSOI Technology

Raphaël Guillaume (1, 2) , Francois Rivet (1) , Andreia Cathelin (2) , Yann Deval (1)

1 IMS - Laboratoire de l'intégration, du matériau au système
2 STMicroelectronics

Two compact frequency generation topologies based on distributed oscillator architecture have been for the very first time integrated at 134GHz and 202GHz in a 10ML 28nm FDSOI CMOS technology. The efficient fundamental frequency generation enables output powers of 0.4dBm and 0.3dBm and 5.5% and 5.4% DC-to-RF efficiency respectively. The body tie of the 28nm FDSOI technology allows phase noise fine tuning through body-bias control. The measured optimum phase noises are -99.6dBc/Hz and -100.4dBc/Hz at 1MHz offset, for the two different oscillators. Robust design has been as well demonstrated, opening the way to mmW and sub-mmW SoC integration in deep submicron FDSOI CMOS.

Domaines: Electronique

Raphaël Guillaume, Francois Rivet, Andreia Cathelin, Yann Deval. Energy Efficient Distributed-Oscillators at 134 and 202GHz with Phase-Noise Optimization through Body-Bias Control in 28nm CMOS FDSOI Technology. IEEE Radio Frequency Integrated Circuits Symposium, Jun 2017, Honolulu, United States. pp.156-159. ⟨hal-01552337⟩