Skip to Main content Skip to Navigation
Journal articles

Relationship between heating atmosphere and copper foil impurities during graphene growth via low pressure chemical vapor deposition

Abstract : Low-pressure chemical vapor deposition synthesis of graphene films on two different Cu foils, with different surface oxygen and carbon contents, was performed by controlling H2 and/or Ar flow rates during heating. The influences of heating atmosphere on the final impurity level, quality of the synthesized graphene films and thickness uniformity were investigated depending on Cu foil impurities. Heating of carbon-rich, but oxygen-poor Cu foil in H2 environment resulted in covering the foil surface by residual carbon which then acted as active sites for multilayer graphene growth. Ar-only flow was required during heating to promote high quality graphene growth on this foil. On carbon-poor, but oxygen-rich Cu foil high quality graphene growth was promoted when the heating was carried out under Ar/H2 environment. Almost no carbon residues were observed on this foil even under H2 only flow during heating. The heating atmosphere affected not only graphene growth, but also the type and amount of impurities formed on the surface. H2 and Ar/H2 heating resulted in the formation of spherical nanometer-sized impurities, while irregular-shaped, large (a few mm) SiO2 impurities were observed when Ar alone was used during heating. Quality of the grown films was tested by Quantum Hall Effect measurements.
Document type :
Journal articles
Complete list of metadata

Cited literature [25 references]  Display  Hide  Download

https://hal.archives-ouvertes.fr/hal-01538550
Contributor : Open Archive Toulouse Archive Ouverte (OATAO) Connect in order to contact the contributor
Submitted on : Tuesday, June 13, 2017 - 4:36:42 PM
Last modification on : Tuesday, September 27, 2022 - 4:16:37 AM
Long-term archiving on: : Tuesday, December 12, 2017 - 4:50:33 PM

File

Celik_16772.pdf
Files produced by the author(s)

Identifiers

Citation

Yasemin Çelik, Walter Escoffier, Yang Ming, Emmanuel Flahaut, Ender Suvaci. Relationship between heating atmosphere and copper foil impurities during graphene growth via low pressure chemical vapor deposition. Carbon, Elsevier, 2016, vol. 109, pp. 529-541. ⟨10.1016/j.carbon.2016.08.057⟩. ⟨hal-01538550⟩

Share

Metrics

Record views

125

Files downloads

667