Quantum Dash-based Vertical-External-Cavity Surface-Emitting Laser on InP

Salvatore Pes (1, 2) , Christophe Levallois (1) , Cyril Paranthoen (1) , Nicolas Chevalier (1) , Cyril Hamel (2) , Carmen Gomez (3) , Jean-Christophe Harmand (3) , Sophie Bouchoule (3) , Hervé Folliot (1) , Mehdi Alouini (2)

1 FOTON - Institut des Fonctions Optiques pour les Technologies de l'informatiON
2 IPR - Institut de Physique de Rennes
3 C2N - Centre de Nanosciences et de Nanotechnologies [Marcoussis]

An Optically-Pumped InAs Quantum Dash-based Vertical-External-Cavity Surface-Emitting Laser (OP-QDH-VECSEL) on InP is demonstrated. In multi-mode operation, the device emits up to 163 mW at T=20°C (pump limited) in the 1615-1628 nm wavelength range. When forced to oscillate in the single-frequency regime, it shows a maximum output power of 7.9 mW at 1610 nm, for a T=19.5°C. The emitted light is linearly polarized along the QDH growth direction ([1-10] crystallographic axis). The single-frequency linewidth of the OP-QDH-VECSEL has been estimated to 22 kHz, for a cavity length of 49 mm.

Mots clés: Vertical External Cavity Surface-Emitting Lasers; VECSEL; Semiconductor disk laser; Quantum dash laser; InP based devices; Laser linewidth

Domaines: Optique / photonique; Optique [physics.optics]; Micro et nanotechnologies/Microélectronique; Matériaux; Science des matériaux [cond-mat.mtrl-sci]

Salvatore Pes, Christophe Levallois, Cyril Paranthoen, Nicolas Chevalier, Cyril Hamel, et al.. Quantum Dash-based Vertical-External-Cavity Surface-Emitting Laser on InP. Compound Semiconductor Week 2017 (CSW 2017) - 29th International Conference on Indium Phosphide and Related Materials (IPRM 2017), May 2017, Berlin, Germany. . ⟨hal-01532477⟩