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Resonance Raman of oxygen dangling bonds in amorphous silicon dioxide

Abstract : We investigate the origin of a resonance Raman band induced by ionizing radiation in amorphous silicon dioxide (silica glass), which can be detected under ultraviolet laser excitation. A silica sample, rich of oxygen-excess related defects, was prepared by treating some length of a pure-silica-core multimode fiber in an O2 atmosphere (at high temperature and pressure) and by irradiating it with X-rays at 10 MGy(SiO2) dose. A micro-Raman study revealed a gaussian band peaking at 896 cm−1 with a full width at half maximum of 32 cm−1, which could be detected by exciting the sample with the 325-nm line of a HeCd laser. This spectral feature is absent in the Raman spectra performed with the 442-nm line of the same laser. On the basis of several experimental evidences and some complementary literature data, the 896 cm−1 band is assigned to a resonance Raman scattering of oxygen dangling bonds, often called non-bridging oxygen hole centers
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Submitted on : Saturday, May 27, 2017 - 8:42:07 PM
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Diego Di Francesca, Aziz Boukenter, S. Agnello, Antonino Alessi, Sylvain Girard, et al.. Resonance Raman of oxygen dangling bonds in amorphous silicon dioxide. Journal of Raman Spectroscopy, Wiley, 2016, 48 (2), pp.230-234 ⟨10.1002/jrs.5006⟩. ⟨hal-01528175⟩



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