Low Power Consumption and High-Speed Ge Receivers

L Virot (1) , D Benedikovic (1) , B Szelag (2) , C Alonso-Ramos (1) , J-M M Hartmann (2) , P Crozat (1) , E Cassan (1) , D Marris-Morini (1) , C Baudot (3) , F Boeuf (3) , J-M M Fédéli (2) , C Kopp (2) , L Vivien (1)

1 C2N - Centre de Nanosciences et de Nanotechnologies [Orsay]
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
3 ST-CROLLES - STMicroelectronics [Crolles]

A new Si/Ge/Si heterojunction based waveguide photodetector has been demonstrated in order to reduce the fabrication cost, increase the responsivity, and improve process robustness. State of the art characteristics in terms of dark current, responsivity and bandwidth have been obtained. Furthermore, such photodetectors were characterized in avalanche mode in order to improve the sensitivity and reduce the overall power consumption of the optical circuit

Domaines: Optique / photonique; Matériaux; Micro et nanotechnologies/Microélectronique

L Virot, D Benedikovic, B Szelag, C Alonso-Ramos, J-M M Hartmann, et al.. Low Power Consumption and High-Speed Ge Receivers. Optical Fiber Communication Conference and Exhibition (OFC), Mar 2017, Los Angeles, CA, United States. ⟨10.1364/OFC.2017.Th1A.1⟩. ⟨hal-01527376⟩