Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells

Abstract : The band structure of three-layer symmetric InAs/GaSb/InAs quantum wells confined between AlSb barriers is analyzed theoretically. It is shown that, depending on the thicknesses of the InAs and GaSb layers, a normal band structure, a gapless state with a Dirac cone at the center of the Brillouin zone, or inverted band structure (two-dimensional topological insulator) can be realized in this system. Measurements of the cyclotron resonance in structures with gapless band spectra carried out for different electron concentrations confirm the existence of massless Dirac fermions in InAs/GaSb/InAs quantum wells.
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Article dans une revue
Fizika i tekhnika poluprovodnicov / Semiconductors, MAIK Nauka/Interperiodica, 2017, 51 (1), pp.38-42. 〈10.1134/S1063782617010109〉
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https://hal.archives-ouvertes.fr/hal-01523220
Contributeur : L2c Aigle <>
Soumis le : mardi 16 mai 2017 - 10:35:48
Dernière modification le : mardi 10 octobre 2017 - 11:01:12

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Sergey Krishtopenko, A. V. Ikonnikov, K. V. Maremyanin, L. S. Bovkun, K. E. Spirin, et al.. Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells. Fizika i tekhnika poluprovodnicov / Semiconductors, MAIK Nauka/Interperiodica, 2017, 51 (1), pp.38-42. 〈10.1134/S1063782617010109〉. 〈hal-01523220〉

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