AlGaP-growth and doping by MBE

Abstract : Here, we study the growth of n‐ and p‐doped AlGaP alloys on GaP substrate, in view of their use in laser devices. The impact of growth temperature and growth rate on structural and electrical properties is studied with atomic force microscopy, C(V), Hall effect measurements, SIMS analysis and deep level transient spectroscopy (DLTS). Typical structural defects are identified and characterized. As a main result, it is found that doping of the AlGaP is disabled when the growth temperature is not high enough. This is evidenced by DLTS measurements that reveal deep level trapping.
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Poster communications
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Submitted on : Tuesday, March 28, 2017 - 11:35:52 AM
Last modification on : Tuesday, July 2, 2019 - 4:44:17 PM


  • HAL Id : hal-01497057, version 1


Ronan Tremblay, Jean-Philippe Burin, Tony Rohel, Jean-Philippe Gauthier, Samy Almosni, et al.. AlGaP-growth and doping by MBE. 19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France. ⟨hal-01497057⟩



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