Structural and optical properties investigation of (In,Ga)As/GaP quantum dots for direct bandgap emission

Abstract : Room temperature electroluminescence of a GaP‐based LED on Si and photoluminescence of (In,Ga)As quantum dots (QDs) located at 200nm of the III‐V/Si interface were obtained, illustrating the good structural quality of the GaP/Si template used. The last step towards room temperature lasing on Si is thus reaching the direct bandgap emission. In this work, we investigate the structural and optical properties of (In,Ga)As/GaP QDs, and show that it is possible to incorporate 35% of In with a high density of QDs, and discuss the results obtained in view of the direct bandgap emission.
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Submitted on : Tuesday, March 28, 2017 - 11:31:30 AM
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  • HAL Id : hal-01497049, version 1

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Ronan Tremblay, Tony Rohel, Yoan Léger, Alain Le Corre, Rozenn Bernard, et al.. Structural and optical properties investigation of (In,Ga)As/GaP quantum dots for direct bandgap emission. 19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France. ⟨hal-01497049⟩

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