Ultrathin nanostructured c-Si solar cells by low temperature and scalable processes

A. Gaucher (1) , A. Cattoni (1) , I. Massiot (1) , C. Dupuis (1) , W. Chen (2) , R. Cariou (2, 3) , M. Foldyna (2) , P. Roca I Cabarrocas (2) , Loïc Lalouat (4) , Emmanuel Drouard (4) , Christian Seassal (4) , S. Collin (1)

1 LPN - Laboratoire de photonique et de nanostructures
2 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]
3 III-V Lab - Alcatel-Thalès III-V lab
4 INL - Photonique - INL - Nanophotonique

We report on the fabrication and characterization of both flat and patterned c-Si solar cells on glass. We use epitaxial layers grown by plasma enhanced chemical vapor deposition at low temperature (T<200 degrees C), and anodic bonding on glass substrate. Inverted nanopyramids are fabricated by nanoimprint lithography and wet etching in alkaline solution. With 3 mu m-thick c-Si layers, the performances achieved with planar solar cells are Jsc = 18.3mA/cm(2) and eta = 6.1%. With an additional nanopyramid array on the front side of the cell, an improved short-circuit current of 25.3mA/cm(2) is obtained. We present the latest experimental results and discuss the path to be followed to achieve low cost, ultrathin c-Si solar cells with a 15% targeted efficiency.

Domaines: Sciences de l'ingénieur [physics]; Optique / photonique; Matériaux; Micro et nanotechnologies/Microélectronique

A. Gaucher, A. Cattoni, I. Massiot, C. Dupuis, W. Chen, et al.. Ultrathin nanostructured c-Si solar cells by low temperature and scalable processes. IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015, New Orleans, LA, United States. ⟨hal-01489615⟩