Physical Properties Investigation of Arsenic Based III-V Materials Grown on Nanopatterned Si(100) Substrates - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2015

Physical Properties Investigation of Arsenic Based III-V Materials Grown on Nanopatterned Si(100) Substrates

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hal-01489575 , version 1 (14-03-2017)

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  • HAL Id : hal-01489575 , version 1

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R. Cipro, M. Martin, J. Moeyaert, F. Bassani, V. Gorbenko, et al.. Physical Properties Investigation of Arsenic Based III-V Materials Grown on Nanopatterned Si(100) Substrates. 2015 MRS Spring Meeting & Exhibit, 2015, San Francisco, California, United States. ⟨hal-01489575⟩
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