GaAs nanowires with oxidation-proof arsenic capping/decapping method for the growth of an epitaxial shell

Xin Guan (1) , Jeanne Becdelievre (1) , A. Benali (1) , Claude Botella (1) , Geneviève Grenet (1) , Hervé Dumont (1) , Nicolas Chauvin (2) , Philippe Regreny (1) , Guillaume Saint-Girons (1) , Michel Gendry (1) , Jose Penuelas (1)

1 INL - H&N - INL - Hétéroepitaxie et Nanostructures
2 INL - S&N - INL - Spectroscopies et Nanomatériaux

no abstract

Domaines: Sciences de l'ingénieur [physics]; Micro et nanotechnologies/Microélectronique; Optique / photonique

Xin Guan, Jeanne Becdelievre, A. Benali, Claude Botella, Geneviève Grenet, et al.. GaAs nanowires with oxidation-proof arsenic capping/decapping method for the growth of an epitaxial shell. JSI 2016, 2016, Marseille, France. 2016. ⟨hal-01489056⟩