In Situ Monitoring of Cu(In1-x,Gax)Se2 Composition and Target Poisoning by Real Time Optical Emission Spectroscopy During Deposition From a Hybrid Sputtering/Evaporation Process. - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Plasma Processes and Polymers Année : 2016

In Situ Monitoring of Cu(In1-x,Gax)Se2 Composition and Target Poisoning by Real Time Optical Emission Spectroscopy During Deposition From a Hybrid Sputtering/Evaporation Process.

Résumé

Cu(In1−x,Gax)Se2 (CIGS) thin films can be deposited with a high versatility of composition by a hybrid one-step co-sputtering/evaporation process. In this paper, plasma analysis is performed with an optical emission spectroscopy non-contact tool, following light emissions from different plasma species: sputtered copper, gallium, indium but also evaporated selenium. The variations of plasma characteristics are correlated with target self-bias voltage. Hence, the selenium flow threshold avoiding target poisoning and the main parameter controlling the CIGS composition are determined. This study allows us to set up a process calibration method by means of correlation between the selenium evaporation temperature and the elemental composition of the deposited thin film.

Domaines

Chimie

Dates et versions

hal-01481945 , version 1 (03-03-2017)

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Citer

Jorge Posada, Angélique Bousquet, Marie Jubault, Daniel Lincot, Eric Tomasella. In Situ Monitoring of Cu(In1-x,Gax)Se2 Composition and Target Poisoning by Real Time Optical Emission Spectroscopy During Deposition From a Hybrid Sputtering/Evaporation Process. . Plasma Processes and Polymers, 2016, 13, pp.997-1007. ⟨10.1002/ppap.201600020⟩. ⟨hal-01481945⟩
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