Dislocation half loop formation in GaSb/(001)GaAs islands and steps role: a Monte Carlo simulation

J Dalla Torre , Md Rouhani , Georges Landa (1) , Am Rocher , R Malek , D Esteve

1 Laboratoire Physique des Solides de Toulouse

no abstract

Domaines: Matière Condensée [cond-mat]

J Dalla Torre, Md Rouhani, Georges Landa, Am Rocher, R Malek, et al.. Dislocation half loop formation in GaSb/(001)GaAs islands and steps role: a Monte Carlo simulation. Thin Solid Films, 1998, 336 (1-2), pp.277-280. ⟨hal-01481829⟩