Deep-level study of Ga(In)P(NAs) alloys grown on Si substrates

Artem Baranov (1, 2) , Jean-Paul Kleider (1) , A.S. Gudovskikh (2, 3) , Arouna Darga (1, 4) , E.V. Nikitina (2) , A. Yu Egorov (5)

1 GeePs - Laboratoire Génie électrique et électronique de Paris
2 Saint Petersburg Academic University
3 LETI - Saint Petersburg Electrotechnical University
4 UPMC - Université Pierre et Marie Curie - Paris 6
5 ITMO - National Research University of Information Technologies, Mechanics and Optics [St. Petersburg]

To cite this article: A I Baranov et al 2016 J. Phys.: Conf. Ser. 741 012077 View the article online for updates and enhancements. Related content DLTS of p-type Czochralski Si wafers containing processing-induced macropores E Simoen, V Depauw, I Gordon et al.-Recent citations Modeling of the tandem III-V dilute nitride bulk or quantum engineered/silicon solar cells Khim Kharel and Alex Freundlich-Band structure and absorption properties of (Ga, In)/(P, As, N) symmetric and asymmetric quantum wells and super-lattice structures: Towards lattice-matched Abstract. Defect properties of Ga(In)P(NAs) layers with different composition were studied by admittance spectroscopy. For nitrogen content layers the defect level with energy of 0.44-0.47 eV, which related to nitrogen incorporation into GaP, was observed. Its concentration is lower for GaPNAs layers compared to GaPN/InP due to better compensation by arsenic than by indium in lattice of GaP. Other defect level with energy of 0.30 eV was detected in GaPAs and GaPN/InP layers. Likely, the both observed defects in GaPAs and GaPN/InP have the same nature.

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Micro et nanotechnologies/Microélectronique; Energie électrique; Optique / photonique; Matériaux

Artem Baranov, Jean-Paul Kleider, A.S. Gudovskikh, Arouna Darga, E.V. Nikitina, et al.. Deep-level study of Ga(In)P(NAs) alloys grown on Si substrates. Journal of Physics: Conference Series, 2016, 741, pp.012077. ⟨10.1088/1742-6596/741/1/012077⟩. ⟨hal-01469935⟩