Preliminary Evaluation of Thermo-Sensitive Electrical Parameters Based on the Forward Voltage for Online Chip Temperature Measurements of IGBT Devices

Laurent Dupont (1) , Yvan Avenas (2)

1 IFSTTAR/COSYS/LTN - Laboratoire des Technologies Nouvelles
2 G2ELab - Laboratoire de Génie Electrique de Grenoble

The temperature of power semiconductor devices is one of the main issues affecting the performance, availability, and reliability of power converters. The chip temperature is generally measured using thermosensitive electrical parameters (TSEPs). These parameters are well controlled for laboratory temperature measurements, where the power devices are not used under functional conditions. However, the use of TSEPs for chip temperature measurements in online conditions has yet to be demonstrated. This paper presents an experimental evaluation of two new TSEPs based on measuring the forward voltage, which could be used during operation of the converter. It examines the accuracy of the chip temperature measurement and also discusses the results in terms of robustness to the aging of power devices.

Mots clés: Power semiconductor; temperature; infrared measurement; IGBT; saturation voltage; thermo-sensitive electrical parameter

Mots clés: ELECTRICITE; DUREE DE VIE; ELECTRONIQUE; SEMICONDUCTEUR; THERMOGRAPHIE INFRAROUGE

Domaines: Electronique

Laurent Dupont, Yvan Avenas. Preliminary Evaluation of Thermo-Sensitive Electrical Parameters Based on the Forward Voltage for Online Chip Temperature Measurements of IGBT Devices. IEEE Transactions on Industry Applications, 2015, 6 (51), pp.4688-4698. ⟨10.1109/TIA.2015.2458973⟩. ⟨hal-01466116⟩