SIOxNy – SINx DOUBLE ANTIREFLECTION LAYER FOR MULTICRYSTALLINE SILICON SOLAR CELLS - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2009

SIOxNy – SINx DOUBLE ANTIREFLECTION LAYER FOR MULTICRYSTALLINE SILICON SOLAR CELLS

Erwann Fourmond
M Lemiti

Résumé

In order to enhance photon transmission into multicrystalline silicon solar cells, double-layer antire-flection coatings (ARC) were simulated using the measured optical constants of hydrogenated silicon oxynitride SiO x N y :H and hydrogenated silicon nitride SiN x :H layers deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD). On polished surfaces, these optimized structures have the potential to increase the short-circuit current by more than 2% for non-encapsulated cells and up to 0.5% for encapsulated cells, in comparison with the standard single SiN x :H ARC. Industrial multicrystalline silicon solar cells were fabricated in order to validate the simulations. In spite of an inhomogeneous NaOH textured surface, the short-circuit current have shown an increase up to 2.3%, which highlights the potential of such structures for laboratory high-efficiency solar cells.
Fichier principal
Vignette du fichier
2CV.2.59 - J. Dupuis - SiOxNy, SiNx double anti-reflection layer for multicrystalline silicon solar cells - Paper.pdf (218.87 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-01457852 , version 1 (06-02-2017)

Identifiants

Citer

Julien Dupuis, J.-F. Lelièvre, Erwann Fourmond, Virginie Mong-The Yen, O. Nichiporuk, et al.. SIOxNy – SINx DOUBLE ANTIREFLECTION LAYER FOR MULTICRYSTALLINE SILICON SOLAR CELLS. 24th European Photovoltaic Solar Energy Conference (PVSEC 2009), Sep 2009, Hambourg, Germany. pp.1636 - 1639, ⟨10.4229/24thEUPVSEC2009-2CV.2.59⟩. ⟨hal-01457852⟩
145 Consultations
458 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More