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A comprehensive analysis of the (root 13 x root 13)R13.9 degrees type II structure of silicene on Ag(111)

Abstract : In this paper, using the same geometrical approach as for the (2 root 3 x 2 root 3)R30 degrees structure (Jamgotchian et al 2015 J. Phys.: Condens. Matter 27 395002), for the (root 13 x root 13)R13.9 degrees type II structure, we propose an atomic model of the silicene layer based on a periodic relaxation of the strain epitaxy. This relaxation creates periodic arrangements of perfect areas of (root 13 x root 13)R13.9 degrees type II structure surrounded by defect areas. A detailed analysis of the main published experimental results, obtained by scanning tunneling microscopy and by low energy electron diffraction, shows a good agreement with the geometrical model.
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Submitted on : Friday, February 3, 2017 - 10:59:35 AM
Last modification on : Tuesday, June 25, 2019 - 8:52:03 AM

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H. Jamgotchian, B. Ealet, H. Maradj, J-Y Hoarau, J-P Biberian, et al.. A comprehensive analysis of the (root 13 x root 13)R13.9 degrees type II structure of silicene on Ag(111). Journal of Physics: Condensed Matter, IOP Publishing, 2016, 28 (19), pp.195002. ⟨10.1088/0953-8984/28/19/195002⟩. ⟨hal-01455000⟩

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