A comprehensive analysis of the (root 13 x root 13)R13.9 degrees type II structure of silicene on Ag(111)

H. Jamgotchian (1) , B. Ealet (1) , H. Maradj (1) , J-y Hoarau (1) , J-P Biberian (1) , B. Aufray (1)

1 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille

In this paper, using the same geometrical approach as for the (2 root 3 x 2 root 3)R30 degrees structure (Jamgotchian et al 2015 J. Phys.: Condens. Matter 27 395002), for the (root 13 x root 13)R13.9 degrees type II structure, we propose an atomic model of the silicene layer based on a periodic relaxation of the strain epitaxy. This relaxation creates periodic arrangements of perfect areas of (root 13 x root 13)R13.9 degrees type II structure surrounded by defect areas. A detailed analysis of the main published experimental results, obtained by scanning tunneling microscopy and by low energy electron diffraction, shows a good agreement with the geometrical model.

Domaines: Physique [physics]

H. Jamgotchian, B. Ealet, H. Maradj, J-y Hoarau, J-P Biberian, et al.. A comprehensive analysis of the (root 13 x root 13)R13.9 degrees type II structure of silicene on Ag(111). Journal of Physics: Condensed Matter, 2016, 28 (19), pp.195002. ⟨10.1088/0953-8984/28/19/195002⟩. ⟨hal-01455000⟩