Pixel pitch and particle energy influence on the dark current distribution of neutron irradiated CMOS image sensors

Abstract : The dark current produced by neutron irradiation in CMOS Image Sensors (CIS) is investigated. Several CIS with different photodiode types and pixel pitches are irradiated with various neutron energies and fluences to study the influence of each of these optical detector and irradiation parameters on the dark current distribution. An empirical model is tested on the experimental data and validated on all the irradiated optical imagers. This model is able to describe all the presented dark current distributions with no parameter variation for neutron energies of 14 MeV or higher, regardless of the optical detector and irradiation characteristics. For energies below 1 MeV, it is shown that a single parameter has to be adjusted because of the lower mean damage energy per nuclear interaction. This model and these conclusions can be transposed to any silicon based solid-state optical imagers such as CIS or Charged Coupled Devices (CCD). This work can also be used when designing an optical imager instrument, to anticipate the dark current increase or to choose a mitigation technique.
Type de document :
Article dans une revue
Optics Express, Optical Society of America, 2016, 24 (4), pp.4299-4315. 〈10.1364/OE.24.004299〉
Liste complète des métadonnées

Littérature citée [42 références]  Voir  Masquer  Télécharger

https://hal.archives-ouvertes.fr/hal-01450930
Contributeur : Open Archive Toulouse Archive Ouverte (oatao) <>
Soumis le : lundi 6 février 2017 - 08:57:22
Dernière modification le : lundi 15 octobre 2018 - 15:54:03
Document(s) archivé(s) le : dimanche 7 mai 2017 - 12:15:20

Fichier

Belloir_17367.pdf
Fichiers produits par l'(les) auteur(s)

Identifiants

Collections

CEA | DAM

Citation

Jean-Marc Belloir, Vincent Goiffon, Cédric Virmontois, Mélanie Raine, Philippe Paillet, et al.. Pixel pitch and particle energy influence on the dark current distribution of neutron irradiated CMOS image sensors. Optics Express, Optical Society of America, 2016, 24 (4), pp.4299-4315. 〈10.1364/OE.24.004299〉. 〈hal-01450930〉

Partager

Métriques

Consultations de la notice

66

Téléchargements de fichiers

64