Service interruption on Monday 11 July from 12:30 to 13:00: all the sites of the CCSD (HAL, Epiciences, SciencesConf, AureHAL) will be inaccessible (network hardware connection).
Skip to Main content Skip to Navigation
Journal articles

Dark Current Spectroscopy on Alpha Irradiated Pinned Photodiode CMOS Image Sensors

Abstract : Dark Current Spectroscopy is tested for the first time on irradiated CMOS Image sensors (CIS) to detect and identify radiation-induced silicon bulk defects. Two different pinned photodiode CIS are tested: a 5MP Commercial-Off-The-Shelf (COTS) CIS from OmniVision (OV5647) and a 256x256 pixel custom CIS. These CISs are irradiated with alpha particles at various fluences and at two different particle energies in the custom CIS (4 MeV or < 500 keV). Several defect types are detected in both CIS (up to five in the custom CIS). The identity of the defects is investigated by measuring the activation energy of the dark current and the stability of the defects during an isochronal annealing. Two defects are identified in the custom CIS: the divacancy and the vacancy-phosphorus. This work proves that dark current spectroscopy can be used on irradiated CIS to detect and identify radiation-induced silicon bulk defects.
Document type :
Journal articles
Complete list of metadata

Cited literature [34 references]  Display  Hide  Download

https://hal.archives-ouvertes.fr/hal-01450862
Contributor : Open Archive Toulouse Archive Ouverte (OATAO) Connect in order to contact the contributor
Submitted on : Tuesday, January 31, 2017 - 2:12:41 PM
Last modification on : Thursday, July 25, 2019 - 4:34:16 PM
Long-term archiving on: : Monday, May 1, 2017 - 2:24:24 PM

File

Belloir_17368.pdf
Files produced by the author(s)

Identifiers

Collections

CEA | DAM

Citation

Jean-Marc Belloir, Vincent Goiffon, Cédric Virmontois, Philippe Paillet, Mélanie Raine, et al.. Dark Current Spectroscopy on Alpha Irradiated Pinned Photodiode CMOS Image Sensors. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2016, vol. 63 (n° 4), pp. 2183-2192. ⟨10.1109/TNS.2016.2548562⟩. ⟨hal-01450862⟩

Share

Metrics

Record views

125

Files downloads

308