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Giant tunnel-electron injection in nitrogen-doped graphene

Abstract : Scanning tunneling microscopy experiments have been performed to measure the local electron injection in nitrogen-doped graphene on SiC(000¯1) and were successfully compared to ab initio calculations. In graphene, a gaplike feature is measured around the Fermi level due to a phonon-mediated tunneling channel. At nitrogen sites, this feature vanishes due to an increase of the elastic channel that is allowed because of symmetry breaking induced by the nitrogen atoms. A large conductance enhancement by a factor of up to 500 was measured at the Fermi level by comparing local spectroscopy at nitrogen sites and at carbon sites. Nitrogen doping can therefore be proposed as a way to improve tunnel-electron injection in graphene.
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Contributor : Véronique Soullier <>
Submitted on : Wednesday, January 25, 2017 - 11:37:15 AM
Last modification on : Wednesday, February 17, 2021 - 3:26:07 PM

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Jérôme Lagoute, Frédéric Joucken, Vincent Repain, Yann Tison, Cyril Chacon, et al.. Giant tunnel-electron injection in nitrogen-doped graphene. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2015, 91 (125442), 5 p. ⟨10.1103/PhysRevB.91.125442⟩. ⟨hal-01445703⟩



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