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Journal articles
Giant tunnel-electron injection in nitrogen-doped graphene
Jérôme Lagoute
1
Frédéric Joucken
2
Vincent Repain
1
Yann Tison
1
Cyril Chacon
1
Amandine Bellec
1
Yann Girard
1
Robert Sporken
2
Edward H. Conrad
3
Francois Ducastelle
4
Mattias Palsgaard
5
Nick Papior Andersen
5
Mads Brandbyge
5
Sylvie Rousset
1
Jérôme Lagoute 1
Author IdHAL : jerome-lagoute ORCID : https://orcid.org/0000-0002-0568-6991
Frédéric Joucken 2
Author
Vincent Repain 1
Author IdHAL : vrepain
Yann Tison 1
Author IdHAL : yann-tison ResearcherId : http://www.researcherid.com/rid/A-7645-2008 ORCID : https://orcid.org/0000-0002-4420-7842
Cyril Chacon 1
Author
Amandine Bellec 1
Author IdHAL : amandine-bellec ORCID : https://orcid.org/0000-0001-7410-9736
Yann Girard 1
Author IdHAL : yann-girard ORCID : https://orcid.org/0000-0001-5708-4338
Robert Sporken 2
Author
Edward H. Conrad 3
Author
Francois Ducastelle 4
Author
Mattias Palsgaard 5
Author
Nick Papior Andersen 5
Author
Mads Brandbyge 5
Author
Sylvie Rousset 1
Author IdHAL : sylvie-rousset ORCID : https://orcid.org/0000-0001-9827-4402
1
MPQ (UMR_7162) - Laboratoire Matériaux et Phénomènes Quantiques (Université Paris Diderot, Bât. Condorcet , 10 rue Alice Domon et Leonie Duquet, Case 7021, 75205 Paris cedex 13 - France)
- UPD7 - Université Paris Diderot - Paris 7 : UMR_7162 (5 rue Thomas-Mann - 75205 Paris cedex 13 - France)
- CNRS - Centre National de la Recherche Scientifique : UMR_7162 (France)
2
PMR - Centre de Recherche en Physique de la Matière et du Rayonnement [Namur] (rue Joseph Grafé 2, 5000 Namur - Belgium)
- UNamur - Université de Namur [Namur] (Rempart de la Vierge 8, 5000 Namur - Belgium)
3
Georgia Institute of Technology [Atlanta] (North Avenue, Atlanta, GA 30332 - United States)
4
LEM - ONERA - CNRS - Laboratoire d'étude des microstructures [Châtillon] (F-92322 Châtillon - France)
- ONERA (France)
- CNRS - Centre National de la Recherche Scientifique : UMR104 (France)
5
Center for Nanostructured Graphene (Kongens Lyngby - Denmark)
Abstract : Scanning tunneling microscopy experiments have been performed to measure the local electron injection in nitrogen-doped graphene on SiC(000¯1) and were successfully compared to ab initio calculations. In graphene, a gaplike feature is measured around the Fermi level due to a phonon-mediated tunneling channel. At nitrogen sites, this feature vanishes due to an increase of the elastic channel that is allowed because of symmetry breaking induced by the nitrogen atoms. A large conductance enhancement by a factor of up to 500 was measured at the Fermi level by comparing local spectroscopy at nitrogen sites and at carbon sites. Nitrogen doping can therefore be proposed as a way to improve tunnel-electron injection in graphene.
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Journal articles
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https://hal.archives-ouvertes.fr/hal-01445703
Contributor : Véronique Soullier <>
Submitted on : Wednesday, January 25, 2017 - 11:37:15 AM
Last modification on : Wednesday, February 17, 2021 - 3:26:07 PM
Contributor : Véronique Soullier <>
Submitted on : Wednesday, January 25, 2017 - 11:37:15 AM
Last modification on : Wednesday, February 17, 2021 - 3:26:07 PM
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- HAL Id : hal-01445703, version 1
- DOI : 10.1103/PhysRevB.91.125442
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CNRS | IPREM | ONERA | UNIV-PARIS7 | USPC | UNIV-PAU | IPREM-PCM | UNIV-PARIS | UP-SCIENCES | MPQ | UPPA-OA
Citation
Jérôme Lagoute, Frédéric Joucken, Vincent Repain, Yann Tison, Cyril Chacon, et al.. Giant tunnel-electron injection in nitrogen-doped graphene. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2015, 91 (125442), 5 p. ⟨10.1103/PhysRevB.91.125442⟩. ⟨hal-01445703⟩
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