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Article Dans Une Revue Applied Physics Letters Année : 2016

Te homogeneous precipitation in Ge dislocation loop vicinity

Résumé

High resolution microscopies were used to study the interactions of Te atoms with Ge dislocation loops, after a standard n-type doping process in Ge. Te atoms neither segregate nor precipitate on dislocation loops, but form Te-Ge clusters at the same depth as dislocation loops, in contradiction with usual dopant behavior and thermodynamic expectations. Atomistic kinetic Monte Carlo simulations show that Te atoms are repulsed from dislocation loops due to elastic interactions, promoting homogeneous Te-Ge nucleation between dislocation loops. This phenomenon is enhanced by coulombic interactions between activated Te2+ or Te1+ ions. Published by AIP Publishing.

Dates et versions

hal-01435281 , version 1 (13-01-2017)

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J. Perrin Toinin, A. Portavoce, M. Texier, M. Bertoglio, K. Hoummada. Te homogeneous precipitation in Ge dislocation loop vicinity. Applied Physics Letters, 2016, 108 (23), ⟨10.1063/1.4953627⟩. ⟨hal-01435281⟩
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