Supersaturation state effect in diffusion induced Ge nanowires growth at high temperatures

S. J. Rezvani , Luc Favre (1) , F. Celegato , L. Boarino , Isabelle Berbezier (1) , N. Pinto

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

We report on supersaturation state effect in diffusion-induced vapor-liquid-solid growth of Ge nanowires at high temperature. Our experimental investigation establishes that at T >= 550 degrees C the growth is hindered while the growth limitation is not resulted from a high value of the desorption rate. We demonstrate that the suppressed growth is a result of the droplets large chemical potential that inhibit the supersaturation state. This results either in a strong growth limitation due to a significant droplets enlargement or to a growth cessation. (C) 2015 Elsevier B.V. All rights reserved.

Domaines: Micro et nanotechnologies/Microélectronique

S. J. Rezvani, Luc Favre, F. Celegato, L. Boarino, Isabelle Berbezier, et al.. Supersaturation state effect in diffusion induced Ge nanowires growth at high temperatures. Journal of Crystal Growth, 2016, 436, pp.51-55. ⟨10.1016/j.jcrysgro.2015.11.029⟩. ⟨hal-01435218⟩