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Temperature dependent lifetime spectroscopy (TDLS) for the identification of metallic impurities

Abstract : The paper is devoted to the identification of the metallic impurities in silicon wafers by using Temperature Dependent Lifetime Spectroscopy (TDLS). We consider the variation of all recombination mechanisms, intrinsic and extrinsic, to follow the variation of lifetime with the temperature. The extrinsic recombination mechanism is based on the standard Shockley-Read-Hall theory (SRH) [1], [2] and we simulated the variation of SRH lifetime for two impurities : gold and iron. The simulation results show that their SRH lifetime variations with the temperature are opposite and that the presence of a peak is characteristic of the impurity studied. Experimental measurements are displayed showing the identification of gold impurity by means of Phase-Shift TDLS (PS-TDLS) measurement. Thanks to these results, we demonstrate that PS-TDLS is an efficient method to identify gold and iron impurities at concentrations as low as 1.10(10)cm(-3) for a doping level of 1.10(15)cm(-3). (C) 2016 The Authors. Published by Elsevier Ltd.
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Submitted on : Friday, January 13, 2017 - 4:41:05 PM
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Etienne Quiniou, Olivier Palais, Damien Barakel, Isabelle Perichaud. Temperature dependent lifetime spectroscopy (TDLS) for the identification of metallic impurities. PROCEEDINGS OF THE 6TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2016), 2016, Unknown, Unknown Region. pp.180-187, ⟨10.1016/j.egypro.2016.07.017⟩. ⟨hal-01435204⟩

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