Normally-off AlGaN/GaN Recessed MOS-HEMTs on Normally-on Epitaxial Structures for Microwave Power Applications

Linh Trinh Xuan , Raphaël Aubry (1) , Olivier Patard (1) , Jean-Claude Jacquet (1) , Piero Gamarra (1) , Stéphane Piotrowicz (1) , Sylvain Delage (1) , Sylvain Laurent , Philippe Bouysse (2) , Raymond Quéré (2)

1 III-V Lab - Alcatel-Thales III-V Lab
2 XLIM-SRF - Systèmes RF

Mots clés: Gallium Nitride (GaN); High Electron Mobility Transistor (HEMT); Normally-off

Domaines: Electronique

Linh Trinh Xuan, Raphaël Aubry, Olivier Patard, Jean-Claude Jacquet, Piero Gamarra, et al.. Normally-off AlGaN/GaN Recessed MOS-HEMTs on Normally-on Epitaxial Structures for Microwave Power Applications. Europen Microwave Week, Oct 2016, Londres, United Kingdom. ⟨hal-01432290⟩