Electron transport through high-kappa dielectric barriers: A non-equilibrium Green's function (NEGF) study

Daniela Munteanu (1) , Jean-Luc Autran (1) , Mathieu Moreau (1) , M. Houssa

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

We present a simulation study of the coherent transport of electrons through high permittivity (high-kappa) dielectric barriers using the non-equilibrium Green's function (NEGF) formalism. Calculation and useful formula are established for a one-dimensional grid using a finite-difference scheme and an effective-mass depending on the position along the grid. A numerical simulation code is used to investigate the tunneling properties and the transmission coefficient of different metal-insulator-metal structures with stacked dielectrics and to compare single- or two-layer high-kappa dielectric stacks in terms of tunneling transmission coefficient and local density-of-states. We particularly highlight the influence of wave-function reflections against barrier discontinuity on the transmission coefficient, especially in two-layer high-kappa dielectric stacks. (C) 2009 Elsevier B.V. All rights reserved.

Domaines: Micro et nanotechnologies/Microélectronique

Daniela Munteanu, Jean-Luc Autran, Mathieu Moreau, M. Houssa. Electron transport through high-kappa dielectric barriers: A non-equilibrium Green's function (NEGF) study. Journal of Non-Crystalline Solids, 2009, 355 (18-21), pp.1180-1184. ⟨10.1016/j.jnoncrysol.2009.03.006⟩. ⟨hal-01430113⟩