Experimental Investigation on the Quasi-Ballistic Transport: Part I-Determination of a New Backscattering Coefficient Extraction Methodology

Vincent Barral , Thierry Poiroux , Jérôme Saint-Martin , Daniela Munteanu (1) , Jean-Luc Autran (1) , Simon Deleonibus

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

A new fully experimental method to determine the backscattering coefficient and the ballistic ratio of n- and p-FDSOI and multigate nanodevices is proposed in this paper. This technique is the first one that takes multisubband population, carrier degeneracy, and short channel effects into account. Owing to self-consistent Poisson-Schrodinger simulations, common assumptions such as one subband occupied by carriers are investigated. For the first time, universal abaci, which are functional whatever the architecture dimensions and the gate/substrate polarizations, have been developed in order to accurately extract backscattering coefficients for n- and p-FDSOI MOSFETs, both in linear and saturated regimes.

Domaines: Micro et nanotechnologies/Microélectronique

Vincent Barral, Thierry Poiroux, Jérôme Saint-Martin, Daniela Munteanu, Jean-Luc Autran, et al.. Experimental Investigation on the Quasi-Ballistic Transport: Part I-Determination of a New Backscattering Coefficient Extraction Methodology. IEEE Transactions on Electron Devices, 2009, 56 (3), pp.408-419. ⟨10.1109/TED.2008.2011681⟩. ⟨hal-01430106⟩