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Article Dans Une Revue Microelectronics Reliability Année : 2014

Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits

Résumé

This work describes a new computational approach for modeling the radiation-induced transient current and charge collection at circuit-level. Our methodology is based on a random-walk process that takes into account both diffusion and drift of radiation-induced minority carriers in a non-constant electric field both in space and time. The model has been successfully coupled either with an internal routine or with SPICE for circuit solving and feedback on the charge-collection process. It is illustrated here for a junction impacted by an ionizing particle and embedded in a CMOS inverter. (C) 2014 Elsevier Ltd. All rights reserved.
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hal-01430080 , version 1 (09-01-2017)

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Jean-Luc Autran, M. Glorieux, Daniela Munteanu, S. Clerc, G. Gasiot, et al.. Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits. Microelectronics Reliability, 2014, 54 (9-10, SI), pp.2278-2283. ⟨10.1016/j.microrel.2014.07.088⟩. ⟨hal-01430080⟩
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