Multivariate numerical optimization of an InGaN-based hetero junction solar cell

Abstract : Because of remarkable properties of InGaN, we simulated and optimized an InGaN-based dual-junction solar cell connected by a specifically designed tunnel junction. The device is simulated in the framework of a drift-diffusion model using the ATLAS device simulation framework from the Silvaco company. The optimization is done by coupling ATLAS with multivariate mathematical optimization methods based on state-of-the-art optimization algorithms. For that, we used a Python package that we developed in the SAGE software interface. The objective is to optimize the conversion efficiency of the solar cell by simultaneously optimizing several physical and geometrical parameters of the solar cell. It is an unprecedented multivariate optimization for solar cells which takes into account the correlation between these parameters. For this solar cell, we optimized simultaneously 11 parameters of the structure. An optimum conversion efficiency of 24% was predicted for this designed solar cell.
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Poster
The Euro-TMCS II: Theory, Modelling and Computational Methods for Semiconductors, Dec 2016, Cork, Ireland. 0001
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https://hal.archives-ouvertes.fr/hal-01425924
Contributeur : Abdoulwahab Adaine <>
Soumis le : mercredi 4 janvier 2017 - 06:42:55
Dernière modification le : mercredi 10 octobre 2018 - 15:44:02
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  • HAL Id : hal-01425924, version 1

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Adaine Abdoulwahab, Sidi Ould Saad Hamady, Nicolas Fressengeas. Multivariate numerical optimization of an InGaN-based hetero junction solar cell. The Euro-TMCS II: Theory, Modelling and Computational Methods for Semiconductors, Dec 2016, Cork, Ireland. 0001. 〈hal-01425924〉

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