Decreasing contact resistance in organic field effect transistors using oxides as interfacial layers

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Submitted on : Wednesday, December 14, 2016 - 4:58:13 PM
Last modification on : Thursday, January 11, 2018 - 6:21:09 AM

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  • HAL Id : hal-01416670, version 1

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Geoffroy Houin, Mamatimin Abbas, Claude Pellet, Frédéric Duez, Luc Garcia, et al.. Decreasing contact resistance in organic field effect transistors using oxides as interfacial layers. 11th International Thin-Film Conference, 2015, Rennes, France. 〈hal-01416670〉

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