Improvement of parameters in a-Si(p)/c-Si(n)/a-Si(n) solar cells

Abstract : We analyzed and discussed the influence of thickness and doping concentration of the different layers in a-Si(p)/c-Si(n)/a-Si(n) photovoltaic (PV) cells with the aim of increasing its efficiency while decreasing its global cost. Compared to the efficiency of a standard marketed PV cell, elaborated with a ZnO transparent conductive oxide (TCO) layer but without Back Surface Field (BSF) layer, an optimization of the thickness and dopant concentration of both the emitter a-Si(p) and absorber c-Si(n) layers will gain about 3% in the global efficiency of the cell. The results also reveal that with introduction of the third layer, i.e. the BSF layer, the efficiency always achieves values above 20% and all other parameters of the cell, such as the open-circuit voltage, the short-circuit current and the fill-factor, are strongly affected by the thickness and dopant concentration of the layers. The values of all parameters are given and discussed in the paper. Thereby, the simulation results give for an optimized a-Si(p)/c-Si(n)/a-Si(n) PV cells the possibility to decrease the thickness of the absorber layer down to 50 μ m which is lower than in the state-of-the-art. This structure of the cell achieves suitable properties for high efficiency, cost-effectiveness and reliable heterojunction (HJ) solar cell applications.
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Contributeur : Michel Aillerie <>
Soumis le : jeudi 24 novembre 2016 - 12:22:46
Dernière modification le : jeudi 5 avril 2018 - 12:30:21



Mohammed Bouzaki, Michel Aillerie, S. Ould Saad Hamadi, Meriem Chadel, Boumediene Benyoucef. Improvement of parameters in a-Si(p)/c-Si(n)/a-Si(n) solar cells. Materials Research Express, IOP Publishing Ltd, 2016, 3 (10), pp.105502. 〈〉. 〈hal-01402158〉



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