Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport

Nicolas Thierry-Jebali (1) , Arthur Vo-Ha (2) , Davy Carole (2) , Mihai Lazar (1) , Gabriel Ferro (2) , Herve Peyre (3) , Sylvie Contreras (3) , Pierre Brosselard (1)

1 AMPERE - Ampère
2 LMI - Laboratoire des Multimatériaux et Interfaces
3 L2C - Laboratoire Charles Coulomb

Mots clés: Ohmic Contact; Vapor-Liquid-Solid; Selective Epitaxial Growth; p++ 4H-SiC

Domaines: Energie électrique

Nicolas Thierry-Jebali, Arthur Vo-Ha, Davy Carole, Mihai Lazar, Gabriel Ferro, et al.. Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport. HeteroSiC-WASMPE, Jun 2013, Nice, France. pp.57 - 60, ⟨10.4028/www.scientific.net/MSF.806.57⟩. ⟨hal-01391861⟩