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Study of the Stability of 4H-SiC Detectors by Thermal Neutron Irradiation

Abstract : Two types of 4H-SiC semiconductor detectors (D1 and D2) are realized based on ion implantation of 10B inside the aluminum metallic contact. The first detector shows a high leakage current after 10B implantation and low signal to noise ratio. However, improvements concerning the implantation parameters led to lower leakage current and thus to higher signal to noise ratio. Moreover such detectors show their stability under different thermal neutron fluxes showing the reproducible features of the pulse height spectra and same electrical behaviour before and after irradiation.
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https://hal.archives-ouvertes.fr/hal-01391850
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Submitted on : Thursday, November 3, 2016 - 9:16:18 PM
Last modification on : Monday, September 13, 2021 - 2:44:04 PM

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Fatima Issa, Laurent Ottaviani, Vanessa Vervisch, Dora Szalkai, Ludo Vermeeren, et al.. Study of the Stability of 4H-SiC Detectors by Thermal Neutron Irradiation. Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.875 - 878. ⟨10.4028/www.scientific.net/MSF.821-823.875⟩. ⟨hal-01391850⟩

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