4H-SiC P⁺N UV Photodiodes for Space Applications

B. Berenguier (1) , Laurent Ottaviani (1) , Stéphane Biondo (1) , Mihai Lazar (2) , Frédéric Milesi (3) , Olivier Palais (1) , Frank Torregrosa (4) , A. Lyoussi (5) , Evgenia Kalinina (4) , A. Lebedev (4)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 EE - Ampère, Département Energie Electrique
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
4 A.F. Ioffe Physical-Technical Institute
5 DER - Département Etude des Réacteurs

Spectral sensitivity measurements versus temperature have been carried out on irradiated SiC p+n photodiodes, fabricated using two different doping processes: Aluminium standard implantation and Boron plasma immersion ion implantation. The spectral sensitivity of Al doped photodiodes increase for incident wavelength higher than 270 nm, and are very stable below. Boron doped irradiated photodiodes show a general increase of the photoresponse for all wavelengths. In both cases, an hysteresis effect is observable when with the temperature. Results are presented and discussed.

Mots clés: Irradiation; Photodiodes; Spectral Sensitivity

Domaines: Energie électrique

B. Berenguier, Laurent Ottaviani, Stéphane Biondo, Mihai Lazar, Frédéric Milesi, et al.. 4H-SiC P⁺N UV Photodiodes for Space Applications. Materials Science Forum, 2015, 821-823, pp.644 - 647. ⟨10.4028/www.scientific.net/MSF.821-823.644⟩. ⟨hal-01391847⟩