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4H-SiC Neutron Sensors Based on Ion Implanted 10 B Neutron Converter Layer

Abstract : In the framework of the I_SMART project the main aim is to develop an innovative radiation detection system based on silicon carbide technology in view to detect neutrons (thermal and fast) and photons for harsh environments. In the present work two geometries have been realized based on ion implantation of boron. In the first geometry, 10B ions have been implanted into the Al metallic contact of a p-n diode to create the neutron converter layer. In the second geometry one single process has been used to realize both the p+-layer and the neutron converter layer. The technological processes followed to fabricate these detectors, with a study of their electrical behavior and their responses under thermal neutron irradiations are addressed in this paper.
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Submitted on : Friday, October 28, 2016 - 5:54:20 PM
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Fatima Issa, Laurent Ottaviani, Dora Szalkai, Lvermeer Vermeeren, Vanessa Vervisch, et al.. 4H-SiC Neutron Sensors Based on Ion Implanted 10 B Neutron Converter Layer. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2016, 63 (3), pp.1976 - 1980. ⟨10.1109/TNS.2016.2565439⟩. ⟨hal-01389631⟩



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