Optimization of VLS Growth Process for 4H-SiC P/N Junctions

Selsabil Sejil (1, 2) , Mihai Lazar (1) , Frédéric Cayrel (3) , Davy Carole (2) , Christian Brylinski (2) , Dominique Planson (1, 4) , Gabriel Ferro (2) , Christophe Raynaud (1, 4)

1 EE - Ampère, Département Energie Electrique
2 LMI - Laboratoire des Multimatériaux et Interfaces
3 GREMAN - UMR 7347 - GREMAN (matériaux, microélectronique, acoustique et nanotechnologies)
4 INSA Lyon - Institut National des Sciences Appliquées de Lyon

P/N junctions have been fabricated with N+ commercial 4H-SiC substrate on which Vapor-Liquid-Solid (VLS) selective epitaxy was used to create a localized p-type doping. The influence of the carrier gas nature (argon or hydrogen) has been investigated in terms of quality of the growth morphology, deposit thickness and electrical behavior of the P/N junction. Distinct results have been observed with a clear improvement when using VLS selective epitaxy under hydrogen.

Mots clés: VLS Epitaxy; Selected Area Epitaxy; Al Doping; Carrier Gas; P-N Junction; p-Type 4H-SiC

Domaines: Génie des procédés; Electronique

Selsabil Sejil, Mihai Lazar, Frédéric Cayrel, Davy Carole, Christian Brylinski, et al.. Optimization of VLS Growth Process for 4H-SiC P/N Junctions. Materials Science Forum, 2016, 858, pp.205-208. ⟨10.4028/www.scientific.net/MSF.858.205⟩. ⟨hal-01388031⟩