Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current

Hassan Hamad (1, 2) , Christophe Raynaud (2, 1) , Pascal Bevilacqua (1, 2) , Sigo Scharnholz (3) , Dominique Planson (1, 2)

1 EE - Ampère, Département Energie Electrique
2 INSA Lyon - Institut National des Sciences Appliquées de Lyon
3 ISL - Institut franco-allemand de recherches de Saint-Louis

The behavior of 4H-SiC power devices in severe environment with varying temperature is a key characteristic indicating their reliability. This paper shows the dependence of the ionization rates of 4H-SiC with respect to temperature. Optical Beam Induced Current (OBIC) measurements have been performed on PN junctions to determine the multiplication coefficient for temperature varying between 100 and 450K. That allows extracting the ionization rates by fitting the curves of multiplication coefficient.

Mots clés: 4H-SiC; bipolar diode; OBIC; multiplication coefficient; ionization rate

Domaines: Energie électrique

Hassan Hamad, Christophe Raynaud, Pascal Bevilacqua, Sigo Scharnholz, Dominique Planson. Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current. Materials Science Forum, 2015, 821-823, pp.223 - 228. ⟨10.4028/www.scientific.net/MSF.821-823.223⟩. ⟨hal-01387987⟩