Resonant pairing of excitons in semiconductor heterostructures

S. V. Andreev (1, 2, 3)

1 ITMO - National Research University of Information Technologies, Mechanics and Optics [St. Petersburg]
2 LOMA - Laboratoire Ondes et Matière d'Aquitaine
3 LPTMS - Laboratoire de Physique Théorique et Modèles Statistiques

We suggest indirect excitons in two-dimensional semiconductor heterostructures as a platform for the realization of a bosonic analog of the Bardeen-Cooper-Schrieffer superconductor. The quantum phase transition to a biexcitonic gapped state can be controlled in situ by tuning the electric field applied to the structure in the growth direction. The proposed playground should allow one to go to strongly correlated and high-temperature regimes, unattainable with Feshbach resonant atomic gases.

Domaines: Physique [physics]

S. V. Andreev. Resonant pairing of excitons in semiconductor heterostructures. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2016, 94 (14), pp.140501 (1-5). ⟨10.1103/PhysRevB.94.140501⟩. ⟨hal-01383868⟩