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Article Dans Une Revue Applied Physics Letters Année : 2015

Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor

Résumé

Diamond metal-oxide-semiconductor capacitors were prepared using atomic layer deposition at 250 °C of Al2O3 on oxygen-terminated boron doped (001) diamond. Their electrical properties were investigated in terms of capacitance and current versus voltage measurements. Performing X-ray photoelectron spectroscopy based on the measured core level energies and valence band maxima, the interfacial energy band diagram configuration of the Al2O3/O-diamond is established. The band diagram alignment is concluded to be of type I with valence band offset ΔEvΔEv of 1.34 ± 0.2 eV and conduction band offset ΔEcΔEc of 0.56 ± 0.2 eV considering an Al2O3 energy band gap of 7.4 eV. The agreement with electrical measurement and the ability to perform a MOS transistor are discussed.
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hal-01364101 , version 1 (12-09-2016)

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Aurélien Maréchal, Manuela Aoukar, Christophe Vallee, Chloé Rivière, David Eon, et al.. Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor. Applied Physics Letters, 2015, 107 (14), pp.141601. ⟨10.1063/1.4931123⟩. ⟨hal-01364101⟩
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