Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures

Hakim Arezki (1) , Mohamed Boutchich (1) , David Alamarguy (1) , Ali Madouri (2) , José Alvarez (1) , Pere Roca I Cabarrocas (3) , Jean-Paul Kleider (1) , Fei Yao (4) , Young Hee Lee (4)

1 GeePs - Laboratoire Génie électrique et électronique de Paris
2 LPN - Laboratoire de photonique et de nanostructures
3 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]
4 SKKU - Sungkyunkwan University [Suwon]

Large-area graphene film is of great interest for a wide spectrum of electronic applications, such as field effect devices, displays, and solar cells, among many others. Here, we fabricated heterostructures composed of graphene (Gr) grown by chemical vapor deposition (CVD) on copper substrate and transferred to SiO2/Si substrates, capped by n- or p-type doped amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition. Using Raman scattering we show that despite the mechanical strain induced by the a-Si:H deposition, the structural integrity of the graphene is preserved. Moreover, Hall effect measurements directly on the embedded graphene show that the electronic properties of CVD graphene can be modulated according to the doping type of the a-Si:H as well as its phase i.e. amorphous or nanocrystalline.

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Autre [cond-mat.other]

Hakim Arezki, Mohamed Boutchich, David Alamarguy, Ali Madouri, José Alvarez, et al.. Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures. Journal of Physics: Condensed Matter, 2016, 28 (40), pp.404001. ⟨10.1088/0953-8984/28/40/404001⟩. ⟨hal-01363551⟩